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Laser diode module parameter：
|
Wavelength
|
532nm
|
|
Power output
|
50mW
|
|
Power Stability
|
5%
|
|
The Output Beam diameter(mm)
|
2.0mm
|
|
Divergence Angle(mrad)
|
<0.8mrad
|
|
Spot Ellipticity
|
0.9
|
|
M2 Factor
|
<1
|
|
Preheat time
|
<1min
|
|
Working temperature
|
10～40℃
|
|
Storage Temperature
|
-10～60℃
|
|
Beam height from base plate (mm)
|
10mm
|
|
modulation
|
TTL 0～30Khz
|
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